Simulation Evaluation of an Implemented Set of Complementary Bulk Built-In Current Sensors With Dynamic Storage Cell

This paper describes the design, the physical implementation, and the test procedure for a complementary pair of bulk built-in current sensors (Bulk-BICS) circuits, intended to detect single-event transients (SETs) induced by ionizing radiation on n- and p-type metal-oxide-semiconductor transistors. Electrical characterization of the prototype chip was performed, and the results are presented here. While not subjected to actual ionizing radiation, the performance of the manufactured integrated circuit is evaluated from its response to electrical test signals.