DocumentCode :
1764290
Title :
Enhanced Field Emission of 
Nanowires With UV Illumination
Author :
Sin Hui Wang ; Tsung Ying Tsai ; Shoou Jinn Chang ; Wen Yin Weng ; Sheng Po Chang ; Cheng Liang Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
35
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
123
Lastpage :
125
Abstract :
TiO2 nanowires with rutile structures on a SiO2/Si substrate were grown by thermal evaporation. A field-emission property of the low turn-on field was reduced to 3.5 and 2.6 V/μm under UVA in 10 min and UVC in 25 min. The wavelength of UVC was higher than the TiO2 band-gap, so the electrons more easily tunneled to the vacuum level and generated excess heat that lowered the turn-on field emission from under UVA. The work function of samples that had been exposed to UVA for 10 min and UVC for 25 min were reduced to 3.10 and 2.02 eV, respectively.
Keywords :
field emission; nanowires; titanium compounds; SiO2-Si; TiO2; UV Illumination; band-gap; enhanced field emission; low turn-on field; nanowires; thermal evaporation; time 10 min; time 25 min; vacuum level; Heating; Iron; Lighting; Nanowires; Silicon; Substrates; Zinc oxide; ${rm TiO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2287893
Filename :
6670682
Link To Document :
