Two-Dimensional Tunnel Transistors Based on ${\rm Bi}_{2}{\rm Se}_{3}$ Thin Film

A planar 2-D tunnel field-effect transistor based on Bi₂Se₃ thin film is proposed and simulated self-consistently via 2-D Poisson equation and a two-band transport model within the non-equilibrium Green´s function formalism. A 2-quintuple layer Bi₂Se₃ thin film with a thickness of 1.4 nm and bandgap of 0.252 eV is used as channel material. We show that with high source/drain doping and drain underlap, the proposed device can work for ultralow power applications (supply voltage of 0.2 V), showing an ON/OFF current ratio of 10⁴, and a dynamic power indicator 10 times lower than CMOS technology with comparable dimensions.