A Highly Stable Biside Gate Driver Integrated by IZO TFTs

This brief presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs), including a clock-controlled inverter and an additional stabilized module. The biside driving method is used in the proposed gate driver, which will be allocated on both sides of the panel to drive the odd and even lines of pixel array, respectively. Thus, the space symmetry of the panel can be fully utilized for high resolution displays. The output signal of the biside gate driver can be generated stably up to 480th stage with a good noise-suppressed characteristic. The measured power consumption for one stage of the proposed gate driver is 0.5 mW with the clock frequency as 50 kHz. It is shown that the proposed gate driver can output a 3-(mu ) s pulsewidth with a good stability under 120-h test. Furthermore, a 3-in demonstration panel of 320*480 AMOLED display by the IZO TFTs process is fabricated to verify the function of the proposed biside gate driver.