Title :
Full-Duplex RSOA-Based PONs Using 4-PAM With Pre-Equalization
Author :
Stamatiadis, C. ; Matsumoto, R. ; Yoshida, Y. ; Agata, A. ; Maruta, A. ; Kitayama, K.-I.
Author_Institution :
Joint Lab. Silicon Photonics HFT4, Tech. Univ. Berlin, Berlin, Germany
Abstract :
We investigate the use of 4-pulsed amplitude modulation (PAM) in reflective semiconductor optical amplifier (RSOA)-based PON implementations. The performance of low-bandwidth RSOAs can be significantly upgraded using 4-PAM together with pre-equalization. We demonstrate 4-PAM external modulation up to 8 Gb/s using a RSOA with a 3-dB bandwidth of 1.2-GHz and 10-km 4-PAM transmission at 8 Gb/s with bit-error-rate below the forward-error-correction (FEC) limit. In the full-duplex 4-PAM transmission, 10-km symmetric performance up to 4 Gb/s is experimentally demonstrated using a downstream signal with strong DC offset for data cancellation and upstream remodulation.
Keywords :
equalisers; error statistics; forward error correction; optical modulation; passive optical networks; pulse amplitude modulation; semiconductor optical amplifiers; 4-PAM external modulation; 4-pulsed amplitude modulation; DC offset; FEC; bandwidth 1.2 GHz; bit rate 8 Gbit/s; bit-error-rate; data cancelation; distance 10 km; downstream signal; forward-error-correction limit; full-duplex 4-PAM transmission; full-duplex RSOA-based PON; low-bandwidth RSOA; passive optical network; preequalization; reflective semiconductor optical amplifier-based PON implementation; symmetric performance; upstream remodulation; Bandwidth; Bit error rate; Modulation; Optical fibers; Passive optical networks; Fiber To The Home (FTTH); Optical Access Networks; Passive Optical Network (PON); Pulsed Amplitude Modulation (PAM); Pulsed amplitude modulation (PAM); Reflective Semiconductor Optical Amplifier (RSOA); Wavelength Reuse; fiber to the home (FTTH); optical access networks; passive optical network (PON); reflective semiconductor optical amplifier (RSOA); wavelength reuse;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2361922
