Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte

Author

Jin Yu Chao ; Li Qiang Zhu ; Hui Xiao ; Zhi Guo Yuan

Author_Institution

Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

799

Lastpage

801

Abstract

Indium-zinc-oxide (IZO) electric-double-layer transistors are fabricated on proton conducting chitosan-based biopolymer electrolyte. Due to the extremely strong proton gating originated from proton migration within the chitosan films, good electrical performances are obtained. Characteristic time for the proton gating is estimated to be on the order of several milliseconds. Furthermore, a resistor loaded inverter is built, showing a high-voltage gain of ~9 at a low supply voltage of 1.2 V. The proton-gated IZO transistors may find potential applications in portable electronics and synaptic electronics.

Keywords

invertors; polymer electrolytes; thin film transistors; IZO electric-double-layer transistors; characteristic time; indium-zinc-oxide electric-double-layer transistors; proton conducting chitosan-based biopolymer electrolyte; proton gating; proton migration; proton-gated IZO transistors; resistor loaded inverter; voltage 1.2 V; Capacitance; Films; Inverters; Logic gates; Protons; Resistors; Transistors; Electric-double-layer transistor; Proton gating; electric-double-layer transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2445333

Filename

7124443