A Dual-Gate Graphene FET Model for Circuit Simulation—SPICE Implementation

Author

Umoh, Ime J. ; Kazmierski, Tom J. ; Al-Hashimi, B.M.

Author_Institution

Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

Volume

12

Issue

3

fYear

2013

fDate

41395

Firstpage

427

Lastpage

435

Abstract

This paper presents a SPICE compatible model of a dual-gate bilayer graphene field-effect transistor. The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed-form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3, and it shows a good agreement against experimental data with the normalized root-mean-square error less than 10%.

Keywords

SPICE; circuit simulation; field effect transistors; graphene; mean square error methods; Berkeley SPICE-3; Jacobian continuity; boundary points; circuit simulator implementation; closed-form analytical equations; drain current; dual-gate graphene FET model; electron conduction; field-effect transistor; hole conduction; normalized root-mean-square error; quantum capacitance; saturation displacement current; surface potential; Electric potential; Graphene; Integrated circuit modeling; Mathematical model; Quantum capacitance; Transistors; Ambipolar and unipolar conduction; SPICE implementation; graphene device model; hole and electron conduction; saturation displacement current;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2013.2253490

Filename

6482646