• DocumentCode
    1764478
  • Title

    The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors

  • Author

    Bong Seob Yang ; Seungha Oh ; Yoon Jang Kim ; Sang Jin Han ; Hong Woo Lee ; Hyuk Jin Kim ; Sungmin Kim ; Hui Kyung Park ; Jaeyeong Heo ; Jae Kyeong Jeong ; Hyeong Joon Kim

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    41791
  • Firstpage
    2071
  • Lastpage
    2077
  • Abstract
    The oxygen ratio-dependent device performance and reliability of zinc tin oxide (ZTO) thin-film transistors (TFTs) were examined. ZTO TFTs fabricated under pure Ar conditions exhibited a high saturation mobility of 21.5 cm2/Vs, low subthreshold gate swing of 0.34 V/decade, and high ION/OFF ratio (109), whereas modest mobility of 7.3 cm2/Vs was obtained for the ZTO TFTs prepared at an oxygen ratio [R = O2/(Ar + O2)] of 0.3. The photobias stability (AVth ≈-2.0 V) of the ZTO TFTs under the Ar only condition was much better than that (AVth ≈-5.9 V) of the device at R of 0.3, even though their channel layers contained the larger density of oxygen vacancies. This abnormal behavior was attributed to the compressive stress of ZTO films retarding the phototransition of oxygen vacancies.
  • Keywords
    argon; phototransistors; semiconductor device reliability; thin film transistors; zinc compounds; Ar; TFT; ZTO thin-film transistors; ZnSnO; anomalous effect; channel layers; compressive stress; oxygen ratio; oxygen vacancy; photobias stability; phototransition; pure Ar conditions; reliability; saturation mobility; sputtered zinc-tin-oxide transistors; Compressive stress; Logic gates; Sputtering; Stability analysis; Thermal stability; Thin film transistors; Bias stress instability; film stress; light stress instability; oxygen vacancy defect; thin-film transistors (TFTs); zinc tin oxide (ZTO); zinc tin oxide (ZTO).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2318055
  • Filename
    6809162