DocumentCode :
1764494
Title :
New Design of Quantized Hall Resistance Array Device
Author :
Oe, Takehiko ; Matsuhiro, K. ; Itatani, T. ; Gorwadkar, S. ; Kiryu, Syogo ; Kaneko, Naoya
Author_Institution :
Nat. Metrol. Inst. of Japan, Tsukuba, Japan
Volume :
62
Issue :
6
fYear :
2013
fDate :
41426
Firstpage :
1755
Lastpage :
1759
Abstract :
We propose a new design for a 10-kΩ quantized Hall resistance (QHR) array device. This design realizes quantized resistance values that approach decade values with fewer Hall bars. In this design, the 10-kΩ QHR array device consists of only 16 Hall bars, and this number is about 16 times lower than that in the previous design, although the nominal value is identical to the previous one. The nominal value of this device shows a relative difference of only 0.034 μΩ/Ω, based on RK - 90 (=25812.807 Ω), from the exact value of 10 kΩ. This fact might allow us to evaluate each Hall bar in the array device. The parameters of this 10-kΩ QHR array device were measured by a conventional QHR and cryogenic current comparator using the 100- Ω standard resistor. According to the measurement, the value of the 10-kΩ QHR array device agrees with its nominal value within around one part in 108. In the same manner, new combinations of Hall bars were designed for the 100-Ω -1-MΩ range.
Keywords :
electric resistance measurement; measurement standards; quantum Hall effect; Hall bar; cryogenic current comparator; quantized Hall resistance array device; quantized resistance value; resistance 100 ohm to 1 Mohm; standard resistor; Arrays; Bars; Contact resistance; Current measurement; Educational institutions; Resistance; Standards; DC resistance standards; photosensitive polyimide; quantized Hall resistance (QHR); quantum Hall array resistance standard (QHARS); quantum Hall effect (QHE);
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2012.2228750
Filename :
6389774
Link To Document :
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