Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Author

Sarraute, Jean-Maxime ; Schires, Kevin ; LaRochelle, Sophie ; Grillot, Frederic

Author_Institution

Telecom ParisTech, Univ. Paris-Saclay, Paris, France

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

8

Abstract

The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

Keywords

laser mode locking; optical modulation; quantum dot lasers; bit rate 40 Gbit/s; directly modulated broadband optical sources; free-running laser; gain lever; high-speed operation; modulation bandwidths; modulation dynamics enhancement; optically injection-locked semiconductor laser; rate equation model; relaxation oscillation frequency; small-signal analysis; Bandwidth; Frequency modulation; Optical distortion; Optical modulation; Optical pumping; Semiconductor lasers; Semiconductor laser; bandwidth; gain lever; modulation response; optical injection;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2445876

Filename

7124456