DocumentCode
1764649
Title
Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit
Author
Hiblot, Gaspard ; Rafhay, Quentin ; Boeuf, Frederic ; Ghibaudo, Gerard
Author_Institution
STMicroelectron., Crolles, France
Volume
62
Issue
5
fYear
2015
fDate
42125
Firstpage
1375
Lastpage
1382
Abstract
In this paper, a model of gate capacitance is proposed for ultrathin-body-BOX and double-gate MOSFETs with light mass channel materials. First, the model is derived by making the assumption that only one subband is occupied and using quantum perturbation theory to compute the corresponding energy level. Next, this model is confirmed with Poisson-Schrödinger simulations. Finally, the impacts in terms of performance and scaling are discussed.
Keywords
MOSFET; Schrodinger equation; perturbation theory; stochastic processes; DG MOSFET; Poisson-Schrödinger simulations; UTBB MOSFET; analytical model; double-gate; energy level; inversion gate capacitance; light mass channel materials; quantum capacitance limit; quantum perturbation theory; ultrathin-body-BOX; Energy states; Equations; Logic gates; MOSFET; Mathematical model; Quantum capacitance; III--V; III???V; compact model; double gate (DG); quantum capacitance; ultrathin-body BOX (UTBB); ultrathin-body BOX (UTBB).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2406116
Filename
7060694
Link To Document