Title :
Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit
Author :
Hiblot, Gaspard ; Rafhay, Quentin ; Boeuf, Frederic ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this paper, a model of gate capacitance is proposed for ultrathin-body-BOX and double-gate MOSFETs with light mass channel materials. First, the model is derived by making the assumption that only one subband is occupied and using quantum perturbation theory to compute the corresponding energy level. Next, this model is confirmed with Poisson-Schrödinger simulations. Finally, the impacts in terms of performance and scaling are discussed.
Keywords :
MOSFET; Schrodinger equation; perturbation theory; stochastic processes; DG MOSFET; Poisson-Schrödinger simulations; UTBB MOSFET; analytical model; double-gate; energy level; inversion gate capacitance; light mass channel materials; quantum capacitance limit; quantum perturbation theory; ultrathin-body-BOX; Energy states; Equations; Logic gates; MOSFET; Mathematical model; Quantum capacitance; III--V; III???V; compact model; double gate (DG); quantum capacitance; ultrathin-body BOX (UTBB); ultrathin-body BOX (UTBB).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2406116
