DocumentCode :
1764657
Title :
Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) 
and  were formed by a mesa structure using these p<sup>+</sup>-Ge/n-Si and n<sup>+</sup>-Ge/p-Si heterojunctions. A high-κ/metal gate stack was employed. The body-tied Ge multifin FinFET with a fin width (<i>W</i><sub>Fin</sub>) of ~ 40 nm, and the channel length (L<sub>Channel</sub>) was 150 nm for p-FinFET and of 110 nm for n-FinFET, exhibiting a driving current of 174 μA/μm at <i>V</i><sub>G</sub>=-2 V and 102 μA/μm at <i>V</i><sub>G</sub>=2 V , respectively. This is the first experimental demonstration of a body-tied high mobility Ge channel multifin FinFET using a top-down approach.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; carrier mobility; germanium; silicon; FinFET; Ge-Si; body tied high mobility channel; electron volt energy 20 keV to 50 keV; heteroepitaxial growth; heterojunction diodes; high performance heterojunction; multifin field effect transistor; size 110 nm; size 150 nm; size 40 nm; voltage -2 V; voltage 2 V; FinFETs; Heterojunctions; Leakage currents; Metals; Silicon; Substrates; <formula formulatype=)
${rm n}^{+}$ -Ge/p-Si heterojunction; Body-tied; germanium; multifin field-effect transistors (FinFETs); silicon ${rm p}^{+}$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2247766
Filename :
6482668
Link To Document :
