High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike Doping

Author

Chun-Hung Liao ; Chang-Hung Li ; Hsiao-Wen Zan ; Hsin-Fei Meng ; Chuang-Chuang Tsai

Author_Institution

Dept. of Photonics & the Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1274

Lastpage

1276

Abstract

In this letter, we use a dual-gate (DG) structure together with nanometer dotlike doping (NDD) in active channel to produce a-IGZO thin-film transistors with very high current drive. With DG operation, the output current increases from 0.14 mA of the conventional device to 0.76 mA of the NDD device. The enhanced lateral field and improved carrier accumulation in DG operation may explain the significantly enlarged drive current. Particularly, simulated electron distribution reveals that high carrier concentration is induced under NDD regions in DG operation. The device without NDD, however, does not exhibit improved drive current in DG operation.

Keywords

gallium compounds; indium compounds; nanoelectronics; oxidation; semiconductor doping; thin film transistors; zinc compounds; DG operation; DG structure; InGaZnO; NDD device; a-IGZO TFT; a-IGZO thin-film transistors; active channel; carrier accumulation; carrier concentration; high-current-drive dual-gate structure; lateral field; nanometer dotlike doping; output current; oxide thin film transistor; simulated electron distribution; Capacitance; Doping; Logic gates; Plasmas; Semiconductor process modeling; Thin film transistors; a-IGZO thin-film transistor (TFT); dot doping; double gate; dual gate (DG); oxide thin-film transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2278393

Filename

6587475