Industrial PERL-Type Si Solar Cells With Efficiencies Exceeding 19.5%

Author

Cacciato, A. ; Duerinckx, F. ; Baert, K. ; Moors, M. ; Caremans, T. ; Leys, G. ; Mrcarica, M. ; Picard, E. ; Ristow, A. ; Szlufcik, J.

Author_Institution

Photovoltech N.V., Tienen, Belgium

Volume

3

Issue

2

fYear

2013

fDate

41365

Firstpage

628

Lastpage

634

Abstract

In this paper, we describe a path toward industrial passivated emitter, rear locally diffused (PERL)-type crystalline Si solar cells with efficiencies exceeding 19.5%. The impact of thickness and quality of different local back surface field (BSF) pastes on the extended laser ablation (ELA) rear contacting technique is investigated, and the effect of the wafer resistivity and emitter diffusion/oxidation processes on cell performance is evaluated. Based on these investigations, an optimized process flow for PERL-type monocrystalline Si solar cells is defined, and its capability is tested against that of standard Al-BSF in large batch experiments, demonstrating a top efficiency of 19.7%, a 19.5% average efficiency, and an efficiency increase of about 1% abs. with respect to Al-BSF cells.

Keywords

diffusion; electrical resistivity; elemental semiconductors; oxidation; silicon; solar cells; Si; back surface field pastes; cell performance; emitter diffusion-oxidation process; extended laser ablation; industrial PERL-type Si solar cells; industrial passivated emitter; optimized process; quality impact; rear contacting technique; rear locally diffused PERL-type crystalline Si solar cells; standard Al-BSF cells; thickness impact; wafer resistivity effect; Computer architecture; Conductivity; Degradation; Microprocessors; Oxidation; Photovoltaic cells; Silicon; Crystalline silicon solar cells; light-induced degradation; local back surface field; passivated emitter, rear locally diffused (PERL);

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2012.2231725

Filename

6392188