DocumentCode
1764890
Title
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells
Author
Boniardi, Mattia ; Redaelli, A. ; Ghetti, Andrea ; Lacaita, Andrea L.
Author_Institution
Process R&D, Micron Semicond. Italia, Agrate, Italy
Volume
34
Issue
7
fYear
2013
fDate
41456
Firstpage
882
Lastpage
884
Abstract
The electrical and thermal parameters of phase change memory (PCM) cells are modified by cycling-induced mechanisms. In this letter, an adaptive cycling procedure is introduced to provide an endurance characterization by keeping the peak temperature at the heater/chalcogenide interface almost constant despite the cell parameters variations. Experimental results on the PCM wall architecture are collected and explained by considering the reduction of the heater electrical/thermal resistances and the impact of crystallization kinetics variation during cycling.
Keywords
crystallisation; phase change memories; PCM; crystallization kinetics impact variation; cycling-induced parameter variation mechanism; electrical parameter; endurance characterization; heater electrical-thermal resistance; heater-chalcogenide interface; phase change memory cell; thermal parameter; Crystallization kinetics; endurance; phase change memory (PCM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2261859
Filename
6530619
Link To Document