• DocumentCode
    1764890
  • Title

    Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells

  • Author

    Boniardi, Mattia ; Redaelli, A. ; Ghetti, Andrea ; Lacaita, Andrea L.

  • Author_Institution
    Process R&D, Micron Semicond. Italia, Agrate, Italy
  • Volume
    34
  • Issue
    7
  • fYear
    2013
  • fDate
    41456
  • Firstpage
    882
  • Lastpage
    884
  • Abstract
    The electrical and thermal parameters of phase change memory (PCM) cells are modified by cycling-induced mechanisms. In this letter, an adaptive cycling procedure is introduced to provide an endurance characterization by keeping the peak temperature at the heater/chalcogenide interface almost constant despite the cell parameters variations. Experimental results on the PCM wall architecture are collected and explained by considering the reduction of the heater electrical/thermal resistances and the impact of crystallization kinetics variation during cycling.
  • Keywords
    crystallisation; phase change memories; PCM; crystallization kinetics impact variation; cycling-induced parameter variation mechanism; electrical parameter; endurance characterization; heater electrical-thermal resistance; heater-chalcogenide interface; phase change memory cell; thermal parameter; Crystallization kinetics; endurance; phase change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2261859
  • Filename
    6530619