Effects of Rough P-GaN Layer on Improving Light Extraction Efficiency of 630-nm AlGaInP LEDs

Author

Hyung-Joo Lee ; Seong-Un Kim ; Jae-hoon Kim

Author_Institution

CF Technol. Div., AUK Corp., Iksan, South Korea

Volume

34

Issue

7

fYear

2013

fDate

41456

Firstpage

906

Lastpage

908

Abstract

The effects of using a rough p-GaN layer to improve the light extraction efficiency of a 630-nm AlGaInP light-emitting diode (LED) are investigated. It is found that the light extraction efficiency significantly depends on the surface morphology of the rough p-GaN layer grown on the top GaP layer of AlGaInP LED at 525^°C using metal organic chemical vapor deposition. The highest output power of 5 mW is observed from the 630-nm AlGaInP LED chip with a rough p-GaN layer fabricated at the Mg flow rate of 400 sccm, which shows a relative increase of 115% as compared with conventional one.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; surface morphology; wide band gap semiconductors; AlGaInP; AlGaInP LED; GaN; light extraction efficiency; light-emitting diode; metal organic chemical vapor deposition; rough p-GaN layer; surface morphology; temperature 525 degC; wavelength 630 nm; AlGaInP; GaN; light-emitting diode (LED); metal organic chemical vapor deposition (MOCVD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2263291

Filename

6530631