DocumentCode :
1765072
Title :
Visible Blind 4H-SiC P 
-N UV Photodiode Obtained by Al Implantation
Author :
Sciuto, A. ; Mazzillo, M. ; Di Franco, S. ; Roccaforte, F. ; D´Arrigo, G.
Author_Institution :
IMM, Catania, Italy
Volume :
7
Issue :
3
fYear :
2015
fDate :
42156
Firstpage :
1
Lastpage :
6
Abstract :
This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p+-n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (<; 1 nA/cm2 at -100 V) was measured on 1-mm2 area devices up to 90 °C. A peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of about 50% and a visible blindness> 103 were demonstrated. The absence of optically active defects and nitrogen donor-aluminum acceptor pair recombination centers was monitored by optical measurements in the visible range.
Keywords :
aluminium; current density; ion implantation; p-n junctions; photodiodes; semiconductor doping; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; SiC:Al; aluminium ion implantation; electrooptical characteristics; low dark current density; low-doped n-type epilayers; optical measurements; peak responsivity; quantum efficiency; ultraviolet light-sensitive 4H-SiC p+-n junction photodiodes; visible blind 4H-SiC p+-n UV photodiode; visible blindness; visible range; voltage -100 V; wavelength 280 nm; Current measurement; Detectors; Optical films; Optical variables measurement; Photodiodes; Semiconductor device measurement; Temperature measurement; 4H-SiC; Al implantation; p-n junctions; ultraviolet (UV) photodiode; visible blindness;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2015.2439955
Filename :
7124585
Link To Document :
