DocumentCode :
1765191
Title :
Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density
Author :
Saadoune, A. ; Moloi, S.J. ; Bekhouche, K. ; Dehimi, L. ; McPherson, M. ; Sengouga, N. ; Jones, B.K.
Author_Institution :
Lab. des Mater. Metalliques et Semiconductrices, Univ. de Biskra, Biskra, Algeria
Volume :
13
Issue :
1
fYear :
2013
fDate :
41334
Firstpage :
1
Lastpage :
8
Abstract :
The effective space charge density Neff is the average density of carriers over the depletion layer in a semiconductor diode and is measured from the capacitance-voltage curve extrapolated to full depletion Vd. Full semiconductor modeling has been performed for PIN diodes made of materials with a large density of generation-recombination (g-r) centers, such as irradiated or semi-insulating semiconductors. The results show that this extrapolation method can give incorrect values for the introduction rate of charged traps and g-r centers with large irradiation fluence. This is because the introduction of midgap g-r centers moves the Fermi level toward midgap which allows existing traps to change their ionization state. We propose an alternative approach to evaluate the effective density from the C-V characteristics without the need to evaluate the depletion voltage.
Keywords :
Fermi level; carrier density; elemental semiconductors; ionisation; p-i-n diodes; semiconductor counters; semiconductor device models; silicon; space charge; C-V characteristics; Fermi level; PIN diodes; Si; average carrier density; capacitance-voltage curve; charged traps; defect-engineered silicon; depletion layer; extrapolation; full depletion; generation-recombination centers; ionization state; irradiated semiconductors; irradiation fluence; midgap g-r centers; semiconductor detectors; semiconductor diode; semiinsulating semiconductors; space charge density; Capacitance; Capacitance-voltage characteristics; PIN photodiodes; Semiconductor diodes; Silicon; Space charge; Diode; modeling; radiation damage; semi-insulating; semiconductor;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2234460
Filename :
6392231
Link To Document :
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