Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

Author

Hao Cui ; Si-Hyun Park

Author_Institution

Dept. of Electron. Eng., Yeungnam Univ., Gyeongsan, South Korea

Volume

9

Issue

12

fYear

2014

fDate

12 2014

Firstpage

841

Lastpage

844

Abstract

Numerical simulations are performed to investigate the light-extraction efficiencies (LEEs) of gallium nitride-based light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three-dimensional finite-difference time-domain method. PSSs with hexagonal arrays of cone-shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied from nanoscale to microscale. The relative LEE for each PSS-LED was calculated, and the geometrical parameters were analysed for optimised light extraction enhancement of the PSS-LEDs.

Keywords

III-V semiconductors; finite difference time-domain analysis; gallium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; Al₂O₃; GaN; LED; cone-shaped patterns; gallium nitride-based light-emitting diodes; geometrical parameters; hexagonal arrays; light-extraction efficiencies; micropatterned sapphire substrates; nanopatterned sapphire substrates; numerical simulations; pattern array pitch; pattern fill factor; pattern height; three-dimensional finite-difference time-domain method;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2014.0373

Filename

6992357