Snapback-free reverse-conducting IGBT with low turnoff loss

Author

Bo Yi ; Zhi Lin ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

50

Issue

9

fYear

2014

fDate

April 24 2014

Firstpage

703

Lastpage

705

Abstract

A novel structure of the reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed. The structure is connected anti-parallel with a PNP and an NPN transistor, which are in a collector-base short-circuited configuration. Bidirectional conduction capability with no snapback can be obtained by this structure and the turnoff speed can be much improved. The structure can work in two different modes in a reverse-conducting state: a diode mode and a thyristor mode. Two-dimensional numerical simulation results show that the novel RC-IGBT reduces the turnoff loss (E_off) by 26.4 and 37.7% for the thyristor mode and the diode mode, respectively, and has no current non-uniformity compared with the conventional RC-IGBT.

Keywords

insulated gate bipolar transistors; numerical analysis; semiconductor diodes; thyristors; NPN transistor; PNP transistor; bidirectional conduction capability; collector-base short-circuited configuration; diode mode; reverse-conducting insulated gate bipolar transistor; snapback-free RC-IGBT; thyristor mode; two-dimensional numerical simulation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.0169

Filename

6809305