AC Variability and Endurance Measurement Technique for Resistive Switching Memories

Author

Deora, S. ; Bersuker, Gennadi ; Matthews, K. ; Gilmer, D.C. ; Kirsch, P.D.

Author_Institution

SEMATECH, Austin, TX, USA

Volume

14

Issue

1

fYear

2014

fDate

41699

Firstpage

300

Lastpage

303

Abstract

Variability in resistive switching memory (RRAM) devices is studied by applying an AC measurement setup capable of efficiently collecting read current data in low and high resistance states (LRS and HRS, respectively) in each consecutive pulse SET/RESET cycle. It is found that HRS and LRS read current values follow the lognormal and normal distributions, respectively. Endurance test demonstrates that, in a small percentage of cycles, the set operation may fail, which might be missed when a conventional approach of a limited number of read operations is employed.

Keywords

electric current measurement; integrated circuit reliability; log normal distribution; random-access storage; switching circuits; AC measurement setup; AC variability measurement technique; HRS read current value; LRS read current value; RRAM device; endurance measurement technique; endurance test; high resistance state; lognormal distribution; low resistance state; read current data; resistive switching memory device; Current distribution; Gaussian distribution; Hafnium compounds; Ions; Materials reliability; Switches; Low resistance state (LRS); high resistance state (HRS);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2291994

Filename

6671365