DocumentCode
1765714
Title
Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
Author
Austin, Dustin Z. ; Allman, Derryl ; Price, David ; Hose, Sallie ; Conley, John F.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Volume
36
Issue
5
fYear
2015
fDate
42125
Firstpage
496
Lastpage
498
Abstract
Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 °C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance (αVCC) of Al2O3 and the negative αVCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors 2020 projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/μm2, a leakage current density of 6.8 nA/cm2 at 1 V, and a minimized αVCC of -20 ppm/V2.
Keywords
MIM devices; aluminium compounds; atomic layer deposition; capacitors; current density; silicon compounds; αVCC; Al2O3-SiO2; International Technology Roadmap for Semiconductors 2020; MIM capacitor; bilayer optimization; cancelling effect; capacitance density; leakage current density; metal-insulator-insulator-metal capacitor; plasma enhanced atomic layer deposition; positive quadratic voltage coefficient of capacitance; temperature 200 degC; voltage 1 V; voltage nonlinearity; Aluminum oxide; Capacitance; Electrodes; Films; Leakage currents; MIM capacitors; $alpha $ VCC; αVCC; Al2O3/SiO2; MIIM; MIMCAPs; PEALD; metal-insulator-metal capacitors; plasma enhanced atomic layer deposition; quadratic voltage coefficient of capacitance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2412685
Filename
7061431
Link To Document