DocumentCode :
1765756
Title :
Complementary Resistive Switching in Flexible RRAM Devices
Author :
Ya-Wei Dai ; Lin Chen ; Wen Yang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Shi-Jin Ding ; Zhang, David Wei ; Fei Xiao
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Volume :
35
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
915
Lastpage :
917
Abstract :
Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al2O3-x/ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~103), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlOx/Al2O3-x stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.
Keywords :
aluminium compounds; flexible electronics; indium compounds; nickel compounds; random-access storage; switching circuits; tin compounds; Al-Ni-NiAlOx-Al2O3-x-ITO; CRS behavior; CRS style flexible RRAM devices; complementary resistive switching behavior; flexible plastic substrate; high-resistance ON-OFF ratio; oxygen vacancies redistribution; stack layers; time 50 ms; Aluminum oxide; Electron devices; Indium tin oxide; Nickel; Resistance; Substrates; Switches; CRS; atomic layer deposition (ALD); flexible resistive switching; flexible resistive switching.;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2334609
Filename :
6861430
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1765756
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