Title :
Displacement Damage Effects in Irradiated Semiconductor Devices
Author :
Srour, J.R. ; Palko, J.W.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Abstract :
A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.
Keywords :
carrier density; elemental semiconductors; radiation effects; silicon; silicon radiation detectors; NIEL scaling; Si; carrier concentration; defect clusters; irradiated semiconductor devices; radiation hardness assurance; radiation-induced displacement damage effects; random telegraph signals; silicon particle detectors; silicon technology; Atomic layer deposition; Neutrons; Photovoltaic cells; Protons; Silicon; Defect clusters; NIEL; defects; displacement damage; hardness assurance; particle detectors; radiation effects; random telegraph signals; semiconductors; silicon; simulation; solar cells; visible imaging arrays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2261316