DocumentCode :
1766103
Title :
Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization
Author :
Xi, Yan ; Malobabic, Slavica ; Vashchenko, Vladislav ; Liou, Juin
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Volume :
14
Issue :
1
fYear :
2014
fDate :
41699
Firstpage :
446
Lastpage :
450
Abstract :
Correlation factors between different ESD pulse types for different back-end-of-line (BEOL) metal-line topologies have been studied to support system-level on-chip ESD design. The component level (HMM, HBM, and TLP on a wafer) and system-level (IEC gun contact on package) ESD stresses were correlated followed by extraction of correlation factors between the IEC/HMM and TLP, as well as the HBM and TLP supported by analytical approximation. The major conclusions were verified using the thermal coupled mixed-mode simulation analysis.
Keywords :
copper; electrostatic discharge; integrated circuit metallisation; integrated circuit reliability; BEOL; ESD pulses; ESD stresses; HMM; TLP; back-end-of-line metal-line topology; component level correlation factors; metallization; thermal coupled mixed-mode simulation analysis; transmission line pulsing; Correlation; Electrostatic discharges; Hidden Markov models; IEC; Metals; Stress; Topology; Back end of line (BEOL); ESD; IEC system level;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2292039
Filename :
6671409
Link To Document :
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