A Directional-Emission 1060-nm GaAs/InGaAs Microcylinder Laser

A GaAs/InGaAs microcylinder laser in diameter of 15 μm connected with a 2-μm wide output waveguide is fabricated using standard photolithography and inductively coupled plasma etching technique. With the output waveguide, we realize the directional emission with the pulsed lasing operation wavelength of 1060 nm at room temperature. The maximum output power is ~6 μW and the minimum threshold current is 2 mA, which is comparatively low compared with previous reported GaAs material microlasers. A single mode operation is achieved near threshold current at the wavelength of 1060 nm. Mode characteristics are calculated and analyzed by 2-D finite-difference time-domain simulation. The small volume, low threshold current, and low energy consumption make the GaAs/InGaAs microcylinder laser we presented a promising light source for optical interconnection on chip.