An Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse Radio UWB Transceivers

Author

Inanlou, Farzad ; Kenyon, Eleazar ; Cressler, John

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

60

Issue

4

fYear

2013

fDate

Aug. 2013

Firstpage

2605

Lastpage

2610

Abstract

We investigate, for the first time, the effects of total ionizing dose (TID) on a CMOS pulse generator implemented in a SiGe BiCMOS platform, and which is intended for use in space-based impulse radio ultra-wideband transceivers. The pulse generator was fabricated in Jazz Semiconductor´s SBC18-H3 SiGe BiCMOS process technology, which combines 250 GHz SiGe HBTs and 180 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of the TID on the performance of the pulse generator were investigated and a compensation scheme for mitigating these radiation effects is proposed.

Keywords

CMOS integrated circuits; Ge-Si alloys; MMIC; heterojunction bipolar transistors; millimetre wave transistors; pulse generators; radiation effects; radiation hardening (electronics); radio transceivers; ultra wideband communication; HBT; Jazz Semiconductor; SBC18-H3 BiCMOS; SiGe; X-ray source; electron volt energy 10 keV; frequency 250 GHz; pulse generator; radiation effects; size 180 nm; space-based impulse radio UWB transceivers; total dose effects; total ionizing dose damage; BiCMOS integrated circuits; CMOS integrated circuits; Delays; Leakage currents; Pulse generation; Pulse measurements; Silicon germanium; Radiation effects; SiGe BiCMOS; space vehicle telemetry; total ionization dosage (TID); ultra-wideband (UWB);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2248022

Filename

6484209