Single Event Effect Analysis on DC and RF Operated AlGaN/GaN HEMTs

Author

Rostewitz, M. ; Hirche, K. ; Latti, J. ; Jutzi, E.

Author_Institution

Tesat-Spacecom GmbH & Co. KG, Backnang, Germany

Volume

60

Issue

4

fYear

2013

fDate

Aug. 2013

Firstpage

2525

Lastpage

2529

Abstract

Heavy ion irradiation testing was performed on AlGaN/GaN High Electron Mobility Transistors (HEMTs), both under DC and RF operation. Single gate finger radiation test structures and multiple gate finger RF power cells were tested and failure mechanisms analyzed. Chip level peak voltage measurements on L-band power AlGaN/GaN HEMTs are compared to Single Event Burn-out voltage levels extracted from DC Single Event Effect (SEE) test results.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ion beam effects; semiconductor device testing; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN high electron mobility transistors; DC operated AlGaN-GaN HEMT; DC operation; DC single event effect; L-band power AlGaN-GaN HEMT; RF operated AlGaN-GaN HEMT; RF operation; chip level peak voltage measurements; failure mechanisms; heavy ion irradiation testing; multiple gate finger RF power cells; single event burn-out voltage levels; single event effect analysis; single gate finger radiation test structures; Gallium nitride; HEMTs; Logic gates; MODFETs; Radiation effects; Radio frequency; Voltage measurement; AlGaN/GaN HEMT; heavy ion irradiation; single event effect; space radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2247774

Filename

6484212