Title :
Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
Author :
Avolio, Gustavo ; Raffo, Antonio ; Angelov, Iltcho ; Crupi, Giovanni ; Caddemi, Alina ; Vannini, Giorgio ; Schreurs, Dominique M. M.-P
Author_Institution :
KU Leuven, Leuven, Belgium
Abstract :
In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15×300 μm2 pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; CAD tools; GaAs; GaAs technology; charge equations; charge model parameters; cold-FET mixer design; device under test; large-signal measurements; microwave FET; microwave transistor nonlinear model; pHEMT; size 0.15 mum; size 300 mum; small-signal measurements; small-versus large-signal extraction; Current measurement; Integrated circuit modeling; Mathematical model; Microwave circuits; Microwave measurement; Microwave transistors; Solid modeling; Microwave device modeling; nonlinear device modeling; nonlinear measurements;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2313478
