On the finite semiconductor thickness effect applied to large area emitters devices for THz radiation

Arrays of coherently driven photomixers with antenna (antenna emitter arrays, AEAs) have been evaluated as a possibility to overcome the power limitations of individual conventional photomixers with antenna (“antenna emitters”, AEs) for the generation of CW THz radiation. In this paper “large area emitters” (LAEs) are proposed as an alternative approach. In this antenna-free new scheme of photomixing, the THz radiation originates directly from the acceleration of photo-induced charge carriers generated within a large semiconductor area. The quasi-continuous distribution of emitting elements corresponds to a high-density array and results in favorable radiation profiles without side lobes. Moreover, the achievable THz power is expected to outnumber even large AEAs. Last not least, the technological challenge of fabricating LAEs appears to be significantly less demanding. The radiation pattern of a vertical LAE is shown from 0.1 THz up to 1 THz.