RF LDMOS power transistor for multi-carrier GSM base station

Author

Fucheng Hou ; Yaohui Zhang

Author_Institution

Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, we present an optimized RF LDMOS transistor structure based on modified CMOS technology. The drift region is improved to reduce the change rate of the output capacitor of the transistor and ameliorate the linearity of power amplifier. Hot Carrier Injection (HCI) is alleviated by reducing the electric field at the gate edge near the drain by optimizing the field plate and the doping distribution of the channel. Excellent characterizations are achieved for Multi-Carrier GSM Base Station applications with linear gain of 20dB at 960MHz, high efficiency of 75% and 52dBm of saturated power. A load pull system is set up to test the optimum impedance points of the transistor, and the RF performance is evaluated by designing internal matching network and a demonstration board.

Keywords

MOS integrated circuits; cellular radio; optimisation; power transistors; RF LDMOS power transistor; doping distribution; efficiency 75 percent; field plate; frequency 960 MHz; gain 20 dB; hot carrier injection; internal matching network; modified CMOS technology; multicarrier GSM base station; optimum impedance points; power amplifier; Base stations; GSM; Linearity; Logic gates; Power amplifiers; Radio frequency; Transistors; HCI; MTTF; RF LDMOS; linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864254

Filename

6864254