Title :
Leakage of CMOS slow-wave left-handed transmission line on the perforated ground plane
Author :
Xinru Li ; Hsien-Shun Wu ; Tzuang, Ching-Kuang C.
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
This paper presents the leakage phenomenon of the left-handed transmission line (LH-TL) in the slow-wave region. The 15 μm unit-cell of the LH-TL is implemented based on the 0.13 μm 1P8M CMOS technology. The dispersion curves extracted by the measured scattering parameters show that the increasing of the normalized attenuation constant (α/β0) above 320 GHz indicates the transverse electric (TE)-like leakage phenomenon of the proposed LH-TL in the slow-wave region. The theoretical observations based on the three-dimensional electromagnetic field analyses confirmed the leakage phenomenon.
Keywords :
CMOS integrated circuits; electromagnetic fields; microwave integrated circuits; microwave metamaterials; slow wave structures; transmission lines; 1P8M CMOS technology; CMOS slow-wave left-handed transmission line; dispersion curves; perforated ground plane; size 0.13 mum; size 15 mum; three-dimensional electromagnetic field analyses; transverse electric-like leakage phenomenon; Attenuation; CMOS integrated circuits; Inductors; Microwave filters; Power transmission lines; Scattering parameters; Transmission line measurements; CMOS; Leakage; Left-handed transmission line;
Conference_Titel :
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location :
X´ian
DOI :
10.1109/IEEE-IWS.2014.6864261
