430 GHz bandpass filter incorporating synthetic transmission lines in standard 0.13 μm CMOS

Author

Xin Wang ; Hsien-Shun Wu ; Tzuang, Ching-Kuang C.

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ. Tianjin, Tianjin, China

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

4

Abstract

A third-order transmission line (TL) based terahertz bandpass filter (BPF) is presented in this paper. All the resonators are implemented by using the synthetic transmission lines, so-called the complementary-conducting strip transmission line (CCS-TL). The guiding characteristics of the CCS-TL with different size of the periods are theoretically extracted for the filter design. The comparisons between simulated and measured results show that the prototype in 0.13 μm 1P8M CMOS technology has an insertion-loss of 2.4 dB and a fractional bandwidth of 26%, with a 3.5% offset of the center frequency.

Keywords

CMOS integrated circuits; band-pass filters; field effect MIMIC; millimetre wave filters; resonator filters; strip line resonators; terahertz wave devices; 1P8M CMOS technology; BPF; CCS-TL; TL based terahertz bandpass filter; complementary-conducting strip transmission line; filter design; frequency 430 GHz; guiding characteristics; resonators; size 0.13 mum; synthetic transmission lines; third-order transmission line; Band-pass filters; CMOS integrated circuits; Microwave circuits; Microwave filters; Resonator filters; Transmission line measurements; Bandpass filter; CMOS; dual-behavior resonators; transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864262

Filename

6864262