Title :
Low-loss and high-isolation through silicon via technology for high performance RF applications
Author :
Jong-Min Yook ; Dongsu Kim ; Jong-Chul Park ; Chul-Young Kim ; Sok Ho Yi ; Jun Chul Kim
Author_Institution :
Packaging Res. Centre, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
In this study, new TSV structures, TOV (Through Organic Via) and COV (Coaxial Via), are proposed to overcome the lossy problem of the TSV. In the proposed via, a thick insulator, more than 10 μm, can be realized by using the organic lamination process. The lamination process is applied to the silicon hole which is formed by using a deep RIE (Reactive Ion Etching) process. An UV laser was used to drill the laminated organic. To make fully filled metal via, sputtering seeds and copper electroplating methods are used. As results, it was possible to make a 50 μm through-via with a 150 μm depth. The fabricated TOV and COV have very low signal losses compared to standard TSV. Especially, COV has a very good signal isolation due to shield ground wall. The signal loss and isolation of the fabricated COV were 0.044 dB and 43 dB at 10 GHz, respectively.
Keywords :
electroplating; integrated circuit metallisation; integrated circuit packaging; laminates; laser beam machining; microwave integrated circuits; sputter etching; three-dimensional integrated circuits; COV structure; TOV structure; UV laser; coaxial via structure; copper electroplating methods; deep RIE; deep reactive ion etching process; frequency 10 GHz; fully filled metal via; high isolation through silicon via technology; high performance RF applications; loss 0.044 dB; low loss through silicon via technology; organic lamination process; size 150 mum; size 50 mum; sputtering seeds; through organic via structure; Insulators; Lamination; Metals; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986605
