• DocumentCode
    1766924
  • Title

    A single-chip, low-noise video amplifier with variable gain in a 0.5 µm GaAs pHEMT technology

  • Author

    Bisby, Ian

  • Author_Institution
    MA-COM Technol. Solutions, Cork, Ireland
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1134
  • Lastpage
    1137
  • Abstract
    This paper presents a single-chip video amplifier design with integrated voltage variable attenuator (VVA) on a 0.5 μm pHEMT process. A measured gain of greater than 30 dB is presented with an attenuation range of greater than 25 dB and an equivalent input noise (EIN) of 3.2 pA/rtHz. These parameters are achieved over a frequency range of 50 MHz - 1GHz. The chip size is 2.35 mm2.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; attenuators; gallium arsenide; video amplifiers; GaAs; frequency 50 MHz to 1 GHz; integrated voltage variable attenuator; low noise video amplifier; pHEMT technology; single chip video amplifier; size 0.5 mum; variable gain; 1f noise; Field effect transistors; Gain; Optical fiber amplifiers; Photodiodes; Resistors; equivalent input noise (EIN); pHEMT; video amplifier; voltage variable attenuator (VVA);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2014 44th European
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMC.2014.6986640
  • Filename
    6986640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1766924