Title :
A single-chip, low-noise video amplifier with variable gain in a 0.5 µm GaAs pHEMT technology
Author_Institution :
MA-COM Technol. Solutions, Cork, Ireland
Abstract :
This paper presents a single-chip video amplifier design with integrated voltage variable attenuator (VVA) on a 0.5 μm pHEMT process. A measured gain of greater than 30 dB is presented with an attenuation range of greater than 25 dB and an equivalent input noise (EIN) of 3.2 pA/rtHz. These parameters are achieved over a frequency range of 50 MHz - 1GHz. The chip size is 2.35 mm2.
Keywords :
HEMT integrated circuits; III-V semiconductors; attenuators; gallium arsenide; video amplifiers; GaAs; frequency 50 MHz to 1 GHz; integrated voltage variable attenuator; low noise video amplifier; pHEMT technology; single chip video amplifier; size 0.5 mum; variable gain; 1f noise; Field effect transistors; Gain; Optical fiber amplifiers; Photodiodes; Resistors; equivalent input noise (EIN); pHEMT; video amplifier; voltage variable attenuator (VVA);
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986640
