Title :
Gate waveform effects on high-efficiency PA design: An experimental validation
Author :
Bosi, Gianni ; Raffo, Antonio ; Vannini, Giorgio ; Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco
Author_Institution :
Dept. of Eng., Univ. di Ferrara, Ferrara, Italy
Abstract :
In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5×1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.
Keywords :
III-V semiconductors; frequency measurement; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; GaN; GaN HEMT; class-AB tuned-load amplifier; gate waveform effects; harmonic manipulation; high-efficiency power amplifier design; intrinsic section; low frequency measurements; microwave power amplifier; Harmonic analysis; Logic gates; Microwave theory and techniques; Performance evaluation; Power amplifiers; Transistors; Voltage measurement; HEMTs; power amplifiers; waveform engineering;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986675
