Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band

Author

Friesicke, C. ; Quay, R. ; Jacob, A.F.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Hamburg, Germany

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1344

Lastpage

1347

Abstract

This paper presents a comparative study of input and output second-harmonic matching applied to 0.25 μm Al-GaN/GaN HEMTs on s.-i. SiC substrates. The study focuses on the technology´s use at K-band, which is close to the maximum usable frequency for high-power amplifier design. Four power amplifier MMICs using different second-harmonic matching schemes are compared in terms of PAE and output power. The results show the relative improvement of power and efficiency that is gained by the inclusion of second-harmonic matching in the design but also the impact on the power/efficiency bandwidth.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; K-band; SiC; high-power amplifier design; maximum usable frequency; power amplifier MMIC; power/efficiency bandwidth; second-harmonic matching; size 0.25 mum; Frequency conversion; Gallium nitride; HEMTs; Harmonic analysis; Impedance matching; MMICs; MODFETs; Gallium nitride; K-band; MMICs; high power amplifiers; satellite communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986693

Filename

6986693