A broadband 75 to 140 GHz amplifier in 0.13-µm SiGe HBT process

Author

Ping-Han Ho ; Yu-Hsuan Lin ; Huei Wang ; Meliani, Chafik

Author_Institution

Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1368

Lastpage

1371

Abstract

A broadband amplifier from 75 to 140 GHz in SiGe 0.13-μm process is designed, fabricated, and measured. To control the base current effectively, the current mirrors are applied in the amplifier to feed the base current. The measured results of the gain and return losses agree with the simulation. It provides average gain of 11 dB from 75 to 140 GHz and gain-bandwidth product of 231 GHz. To the author´s knowledge, this amplifier exhibits the highest percentage bandwidth for Si-based MMIC amplifiers around 100 GHz except distributed amplifiers.

Keywords

Ge-Si alloys; MMIC amplifiers; current mirrors; distributed amplifiers; heterojunction bipolar transistors; integrated circuit design; integrated circuit manufacture; integrated circuit testing; wideband amplifiers; HBT process; MMIC amplifiers; SiGe; bandwidth 231 GHz; base current; broadband amplifier; current mirrors; distributed amplifiers; frequency 75 GHz to 140 GHz; gain 11 dB; heterojunction bipolar transistors; return losses; size 0.13 mum; Broadband amplifiers; Current measurement; Fingers; Gain; Heterojunction bipolar transistors; Semiconductor device measurement; Silicon germanium; D-band; Silicon-germanium (SiGe); heterojunction bipolar transistor (HBT);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986699

Filename

6986699