Title :
An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks
Author :
Jeng-Han Tsai ; Wang-Long Huang ; Cheng-Yen Lin ; Ruei-An Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
This paper presents a low-power low noise amplifier (LNA) using standard 0.18-μm CMOS technology for X-band satellite receiver applications. Two-stage common source configuration with transformer matching network is chosen to achieve low power, low noise, and compact size while maintaining reasonable gain performance. The measured small signal gain is 13.4 dB at 11 GHz with low power consumption of 4.8 mW from a 1 V supply voltage. The chip size is 0.44 mm2. With noise match at the first stage, the measured noise figure (NF) of the LNA is 3.41 dB at 11 GHz. Compared to previously reported X-band LNA in 0.18-μm CMOS process, the presented LNA demonstrates the highest FOM.
Keywords :
CMOS integrated circuits; low-power electronics; microwave amplifiers; microwave integrated circuits; microwave receivers; CMOS technology; FOM; LNA; X-band low-power CMOS low noise amplifier; X-band satellite receiver; frequency 11 GHz; gain 13.4 dB; low-power low noise amplifier; noise figure; noise figure 3.41 dB; power 4.8 mW; size 0.18 mum; transformer inter-stage matching networks; transformer matching network; two-stage common source configuration; voltage 1 V; CMOS integrated circuits; CMOS technology; Gain; Inductors; Low-noise amplifiers; Noise figure; Transistors; CMOS; X-band; low noise amplifier (LNA); radio frequency integrated circuit (RFIC);
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986725