DocumentCode
1767086
Title
High power K-band GaN on SiC CPW monolithic power amplifier
Author
Cengiz, Omer ; Sen, Ozlem ; Ozbay, Ekmel
Author_Institution
Dept. of Electr. & Electron. Eng., Middle East Tech. Univ., Ankara, Turkey
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1492
Lastpage
1495
Abstract
This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; silicon compounds; wide band gap semiconductors; AlGaN-GaN; CPW MMIC amplifier; HEMT process; SiC; frequency 20.2 GHz to 21.2 GHz; high power K-band CPW monolithic power amplifier; radiation hardness tests; semiinsulating substrate; size 0.25 mum; size 2 inch; voltage 15 V; Coplanar waveguides; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power generation; AlGaN/GaN; HEMTs; MMIC power amplifier; radiation; space;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2014 44th European
Conference_Location
Rome
Type
conf
DOI
10.1109/EuMC.2014.6986731
Filename
6986731
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