Title :
A low magnetic bias sub-millimetre wave semiconductor junction circulator
Author :
Jawad, Ghassan N. ; Sloan, Robin
Author_Institution :
Dept. of Electron. & Commun. Eng., Univ. of Baghdad, Baghdad, Iraq
Abstract :
This paper presents a design for a semiconductor junction circulator to work in the sub-millimetre wave frequency range. An InSb disk is modelled for a low steady applied axial magnetic field. An approach was utilised to design the circulator with minimum required magnetic biasing by exploiting a frequency range above the extraordinary wave resonant frequency. Circulation at frequency of 650GHz with about 9% 10dB bandwidth was predicted using an applied magnetic field as low as 0.2T. The Green´s function description is verified using a commercially available electromagnetic simulation package with resultant electromagnetic field patterns given.
Keywords :
Green´s function methods; III-V semiconductors; electromagnetic fields; indium compounds; magnetic fields; millimetre wave circulators; semiconductor junctions; Green´s function; InSb; InSb disk; axial magnetic field; electromagnetic field patterns; electromagnetic simulation package; extraordinary wave resonant frequency; frequency 650 GHz; magnetic bias; submillimetre wave semiconductor junction circulator; Circulators; Junctions; Magnetic resonance imaging; Magnetic semiconductors; Magnetic tunneling; Resonant frequency; Scattering parameters;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986754