• DocumentCode
    1767130
  • Title

    A low magnetic bias sub-millimetre wave semiconductor junction circulator

  • Author

    Jawad, Ghassan N. ; Sloan, Robin

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Univ. of Baghdad, Baghdad, Iraq
  • fYear
    2014
  • fDate
    6-9 Oct. 2014
  • Firstpage
    1584
  • Lastpage
    1587
  • Abstract
    This paper presents a design for a semiconductor junction circulator to work in the sub-millimetre wave frequency range. An InSb disk is modelled for a low steady applied axial magnetic field. An approach was utilised to design the circulator with minimum required magnetic biasing by exploiting a frequency range above the extraordinary wave resonant frequency. Circulation at frequency of 650GHz with about 9% 10dB bandwidth was predicted using an applied magnetic field as low as 0.2T. The Green´s function description is verified using a commercially available electromagnetic simulation package with resultant electromagnetic field patterns given.
  • Keywords
    Green´s function methods; III-V semiconductors; electromagnetic fields; indium compounds; magnetic fields; millimetre wave circulators; semiconductor junctions; Green´s function; InSb; InSb disk; axial magnetic field; electromagnetic field patterns; electromagnetic simulation package; extraordinary wave resonant frequency; frequency 650 GHz; magnetic bias; submillimetre wave semiconductor junction circulator; Circulators; Junctions; Magnetic resonance imaging; Magnetic semiconductors; Magnetic tunneling; Resonant frequency; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2014 44th European
  • Conference_Location
    Rome
  • Type

    conf

  • DOI
    10.1109/EuMC.2014.6986754
  • Filename
    6986754