A 250 nm CMOS / LDMOS Pulse-Width Modulator and Driver for space-borne GaN switch mode power amplifiers in P-Band

Author

Ghosh, I.S. ; Altmann, U. ; Kersten, O. ; Quibeldey, M. ; Follmann, R. ; Hildenhagen, P. ; Rittweger, M. ; Cabria, L. ; Cipriani, E. ; Colantonio, P. ; Ayllon, N. ; Chowdhary, A.

Author_Institution

IMST GmbH, Kamp-Lintfort, Germany

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1659

Lastpage

1662

Abstract

In this paper, the design of a single-chip RF Pulse-Width Modulator and Driver (PWMD) aimed at exciting a 80 W class-E GaN high-power stage at 435 MHz is described. For the required buffer size, avoiding potential ringing of the pulses within the buffer structure presents a major challenge in the design process. Therefore, a smaller chip capable of driving capacitive loads of up to 5 pF was initially designed, fabricated and tested. An approach based on 3D EM simulations was used to validate the test results. Based on the presented results, an enlarged chip able to drive a 80 W GaN high-power stage is currently being designed.

Keywords

CMOS analogue integrated circuits; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; driver circuits; gallium compounds; pulse width modulation; spaceborne radar; wide band gap semiconductors; 3D EM simulations; CMOS-LDMOS pulse-width modulator; GaN; P-band; PWMD; buffer size; buffer structure; class-E high-power stage; design process; frequency 435 MHz; power 80 W; single-chip RF pulse-width modulator and driver design; size 250 nm; space-borne switch mode power amplifiers; spaceborne synthetic aperture radar; CMOS integrated circuits; Dynamic range; Inverters; Power generation; Pulse width modulation; Radio frequency; Class E; Gallium nitride; Power amplifiers; Pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986773

Filename

6986773