Title :
Research on carrier injection efficiency of SiGe-OI electro-optic modulator
Author :
Song Feng ; Ren-ke Jiang ; Yong Gao
Author_Institution :
Sch. of Sci., Xi´an Polytech. Univ., Xian, China
Abstract :
Based on SiGe-OI (Silicon Germanium on Insulator) material, SiGe-OI electro-optic modulator is established, and PIN electrical modulation structure has been researched. The carrier injection concentration of electro-optical modulator with structure parameters, including the doping concentration of active region, the width of active region, the width between active region and waveguide, Ge content and the other parameters are analyzed, and the device structure parameters are optimized. Compared with SOI (Silicon on Insulator) electro-optic modulator injection concentration, SiGe-OI electro-optic modulator has higher carrier injection efficiency at the same modulation conditions. Accordingly, modulation voltage and modulation power can be effectively reduced.
Keywords :
Ge-Si alloys; doping profiles; electro-optical modulation; integrated optics; integrated optoelectronics; optical waveguides; semiconductor-insulator boundaries; PIN electrical modulation; SiGe; SiGe-OI electrooptic modulator; active region width; carrier injection concentration; carrier injection efficiency; device structure parameters; doping concentration; modulation power; modulation voltage; optimization; silicon germanium-on-insulator; waveguide; Charge carrier processes; Doping; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Optoelectronic devices; PIN structure; SiGe-OI; carrier concentration; electro-optic modulator;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2014 13th International Conference on
Conference_Location :
Suzhou
DOI :
10.1109/ICOCN.2014.6987152
