• DocumentCode
    1767880
  • Title

    40-Gbit/s Direct Modulation of Membrane Buried Heterostructure DFB Laser on SiO2/Si Substrate

  • Author

    Matsuo, Shoichiro ; Fujii, Teruya ; Hasebe, Koichi ; Takeda, Kenji ; Sato, Takao ; Kakitsuka, Takaaki

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
  • Keywords
    distributed feedback lasers; membranes; optical fabrication; optical modulation; quantum well lasers; NRZ signal; SiO2-Si; SiO2-Si substrate; bias current; bit rate 40 Gbit/s; current 15 mA; direct bonding; direct modulation; epitaxial regrowth techniques; lateral current injection DFB laser; membrane buried heterostructure DFB laser; Conferences; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.148
  • Filename
    6987435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767880