DocumentCode :
1767880
Title :
40-Gbit/s Direct Modulation of Membrane Buried Heterostructure DFB Laser on SiO2/Si Substrate
Author :
Matsuo, Shoichiro ; Fujii, Teruya ; Hasebe, Koichi ; Takeda, Kenji ; Sato, Takao ; Kakitsuka, Takaaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear :
2014
fDate :
7-10 Sept. 2014
Firstpage :
30
Lastpage :
31
Abstract :
We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.
Keywords :
distributed feedback lasers; membranes; optical fabrication; optical modulation; quantum well lasers; NRZ signal; SiO2-Si; SiO2-Si substrate; bias current; bit rate 40 Gbit/s; current 15 mA; direct bonding; direct modulation; epitaxial regrowth techniques; lateral current injection DFB laser; membrane buried heterostructure DFB laser; Conferences; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
Type :
conf
DOI :
10.1109/ISLC.2014.148
Filename :
6987435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1767880
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