DocumentCode
1767881
Title
GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser Integrated with GaInAsP Waveguides on Si Substrate
Author
Inoue, Daisuke ; Jieun Lee ; Hiratani, Takuo ; Atsuji, Yuki ; Tomohiro, Amemiya ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
32
Lastpage
33
Abstract
A lateral-current-injection membrane DFB laser integrated with GaInAsP waveguides and a detector was fabricated by butt-joint regrowth technique. As a result, a threshold current of 700 μA under room-temperature CW condition was obtained.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; membranes; optical fabrication; quantum well lasers; waveguide lasers; GaInAsP-InP-GaInAsP; Si; Si substrate; butt-joint regrowth technique; current 700 muA; detector; lateral-current-injection membrane DFB laser; room-temperature CW condition; temperature 293 K to 298 K; threshold current; waveguides; Indium phosphide; Lasers; Optical waveguides; Silicon; Substrates; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.149
Filename
6987436
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