DocumentCode
1767883
Title
Low-Resistance Lateral Junction Formation for Laser Diodes on III-V CMOS Photonics Platform
Author
Ikku, Yuki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution
Dept. of Electr. Eng. & Inf. Syst., Univ. Tokyo, Tokyo, Japan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
34
Lastpage
35
Abstract
Low-resistance lateral pin junctions for LDs on III-V CMOS photonics platform are obtained using Si implantation and Zn diffusion owing to high thermal tolerance of III-V-OI wafer, resulting in observing electro-luminescence from InGaAsP photonic-wire waveguides.
Keywords
III-V semiconductors; diffusion; electroluminescence; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; ion implantation; p-i-n diodes; semiconductor lasers; silicon; waveguide lasers; zinc; III-V CMOS photonics platform; III-V-OI wafer; InGaAsP:Si; diffusion; electroluminescence; ion implantation; laser diodes; low-resistance lateral pin junctions; photonic-wire waveguides; thermal tolerance; Aluminum oxide; Annealing; CMOS integrated circuits; Junctions; Photonics; Resistance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.150
Filename
6987437
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