• DocumentCode
    1767894
  • Title

    InP-Based Type-II Heterostructure Lasers for 2.5µm Working CW at Room Temperature and Above

  • Author

    Sprengel, Stephan ; Veerabathran, Ganpath Kumar ; Koeninger, Anna ; Federer, Florian ; Boehm, G. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; CW operation; GaAsSb-GaInAs-InP; InP-based type-II heterostructure lasers; W-shaped QW; W-shaped quantum wells; pulsed operation; temperature 293 K to 298 K; threshold current density; wavelength 2.5 mum; Pump lasers; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.155
  • Filename
    6987442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767894