DocumentCode :
1767894
Title :
InP-Based Type-II Heterostructure Lasers for 2.5µm Working CW at Room Temperature and Above
Author :
Sprengel, Stephan ; Veerabathran, Ganpath Kumar ; Koeninger, Anna ; Federer, Florian ; Boehm, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
fYear :
2014
fDate :
7-10 Sept. 2014
Firstpage :
44
Lastpage :
45
Abstract :
We present InP-based type-II lasers at 2.5μm, utilizing W-shaped GaAsSb/GaInAs QWs with strongly improved threshold current densities, down to 104A/cm2 per QW at infinite length, CW operation above RT and pulsed operation up to 80°C.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; CW operation; GaAsSb-GaInAs-InP; InP-based type-II heterostructure lasers; W-shaped QW; W-shaped quantum wells; pulsed operation; temperature 293 K to 298 K; threshold current density; wavelength 2.5 mum; Pump lasers; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
Type :
conf
DOI :
10.1109/ISLC.2014.155
Filename :
6987442
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1767894
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