• DocumentCode
    1767913
  • Title

    Monolithic 2.5 GHz Quantum Well InGaAsP Extended Cavity Modelocked Ring Laser with an Integrated Phase Modulator

  • Author

    Latkowski, S. ; Moskalenko, V. ; Tahvili, Saeed ; Smit, Meint ; Bente, Erwin ; Augustin, Luc

  • Author_Institution
    COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven, Netherlands
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    A passively mode locked extended cavity quantum well ring laser at 1.58 μm with repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP based active-passive integration technology. The 33mm long cavity contains gain, saturable absorption and passive waveguide sections as well as a phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive mode-locked operation and with wavelength tuning of the laser modes are experimentally demonstrated. This laser is the lowest reported repetition rate for a monolithically integrated ring laser.
  • Keywords
    gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; laser mode locking; laser modes; laser tuning; monolithic integrated circuits; optical phase shifters; optical saturable absorption; quantum well lasers; ring lasers; waveguide lasers; InGaAsP; InP; frequency 2.5 GHz; indium phosphide based active-passive integration technology; integrated phase modulator; laser mode tuning; monolithic quantum well extended cavity modelocked ring laser; optical phase shifter; optical saturable absorption; passive waveguide sections; passively mode locked extended cavity quantum well ring laser; photonic integrated circuit; size 33 mm; wavelength 1.58 mum; Laser mode locking; Optical amplifiers; Optical fibers; Optical pulses; Ring lasers; Semiconductor lasers; modelocked lasers; photonic integrated circuits; semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.164
  • Filename
    6987451