DocumentCode
1767918
Title
80ºC, 50-Gb/s Directly Modulated InGaAlAs BH-DFB Lasers
Author
Nakahara, Kouji ; Wakayama, Yuki ; Kitatani, Takeshi ; Taniguchi, Takafumi ; Fukamachi, Toshihiko ; Sakuma, Yasushi ; Tanaka, Shoji
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
66
Lastpage
67
Abstract
Direct modulation at 50 Gb/s of 1.3-μm InGaAlAs DFB lasers operating at up to 80°C was experimentally demonstrated by using a ridge-shaped buried heterostructure.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical modulation; semiconductor lasers; InGaAlAs; bit rate 50 Gbit/s; directly modulated BH-DFB lasers; ridge-shaped buried heterostructure; temperature 80 degC; wavelength 1.3 mum; Lasers; Light sources; Modulation; Optical device fabrication; Optical waveguides; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.166
Filename
6987453
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