Title :
Optimized Modulation Bandwidth and Henry Factor of Fabry-Perot InAs/InP Quantum Dash Based Ridge Waveguide Lasers for Access/Metro Networks
Author :
Mollet, O. ; Martinez, A. ; Merghem, K. ; Joshi, S. ; Provost, J.G. ; Lelarge, F. ; Ramdane, A.
Author_Institution :
Lab. for Photonics & Nanostruct., Marcoussis, France
Abstract :
Unprecedented high modal gain of ~100 cm-1 is obtained for an optimized structure based on InAs/InP quantum dashes (QDash) emitting at 1.55 μm. This structure allows achieving ~10 GHz direct modulation bandwidth. P-type doping reduces the Henry factor value down to 2.7.
Keywords :
III-V semiconductors; indium compounds; optical communication equipment; optical modulation; quantum dash lasers; ridge waveguides; semiconductor doping; subscriber loops; waveguide lasers; Fabry-Perot quantum dash based ridge waveguide lasers; Henry factor; InAs-InP; access-metro networks; direct modulation bandwidth; modal gain; optimized modulation bandwidth; p-type doping; wavelength 1.55 mum; Bandwidth; Distributed feedback devices; Gain; Indium phosphide; Laser feedback; Modulation; Semiconductor lasers; (000.0000); OCIS codes: (000.0000) General;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.168
